s m d ty p e w w w . k e x i n . c o m . c n 1 m osf e t n-cha nne l mo s f e t 2 sk1 9 5 9 feat ur es v d s ( v ) = 16v i d = 2a r d s ( o n ) 3.2 ( v g s = 1.5v ) r d s ( o n ) 0.5 ( v g s = 4v ) 1.70 0.1 0.42 0.1 0.46 0.1 1.gate 2.drain 3.source a bs olut e max imum r at ings ta = 25 p ar am eter s y m bol rati ng uni t dr ai n- s our c e v ol tage v d s 16 g ate- s our c e v ol tage v g s 7 conti nuous dr ai n cur r ent i d 2 p ul s ed dr ai n cur r ent ( note.1) i d m 4 p ow er di s s i pati on p d 2 w j unc ti on t em per atur e t j 150 s tor age t em per atur e range t st g - 55 to 150 v a note.1: p w 10m s ,duty cy c l e 50% e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = 250 a , v g s = 0v 16 v z er o g ate v ol tage dr ai n cur r ent i d s s v d s = 16v , v g s = 0v 1 ua g ate- b ody leak age cur r ent i g s s v d s = 0v , v g s = 7v 3 ua g ate cut- off v ol tage v g s ( o f f ) v d s = 3v i d = 100ua 0.5 1.1 v v g s = 1.5v , i d = 50m a 3.2 v g s = 2.5v , i d = 500m a 0.6 v g s = 4v , i d = 1a 0.5 f or w ar d t r ans c onduc tanc e g fs v d s = 3v , i d = 1a 1 s input capac i tanc e c i ss 160 o utput capac i tanc e c o ss 150 rev er s e t r ans fer capac i tanc e c r ss 50 t ur n- o n del ay t i m e t d ( o n ) 45 t ur n- o n ri s e t i m e t r 190 t ur n- o ff del ay t i m e t d ( o f f ) 180 t ur n- o ff f al l t i m e t f 210 pf s tati c dr ai n- s our c e o n- res i s tanc e r d s ( o n ) v g s ( o n ) = 3v , v d s = 3v , i d = 0.5a , r l = 6 ,r g = 10 v g s = 0v , v d s = 3v , f= 1m hz ns mar k ing m ar k i ng nq source (s) internal diode gate protection diode gate (g) drain (d)
s m d ty p e w w w . kexin . com . c n 2 m osfe t n-cha nne l mo s f e t 2 sk1 9 5 9 ty pic al c har ac t er is it ic s derating factor of forward bias safe operating area dt - derating factor - % 0 100 80 60 40 20 t a - ambient temperature - ?c forward bias safe operating area i d - drain current - a 1 10 v ds - drain to source voltage - v drain current vs. drain to source voltage i d - drain current - a 0 2.0 1.6 1.2 0.8 0.4 v ds - drain to source voltage - v transfer characteristics i d - drain current - a 0 10 1 0.1 0.01 0.001 v gs - gate to source voltage - v forward transfer admittance vs. drain current |y fs | - forward transfer admittance - s 0.01 10 i d - drain current - a drain to source on-state resistance vs. drain current r ds(on) - drain to source on-state resistance - ? 0.01 1.2 1 0.8 0.6 0.4 0.2 0 i d - drain current - a 60 30 90 120 150 5 2 1 0.5 0.2 0.1 single pulse 2 5 10 20 50 pw = 100 ms dc 10 ms 1 ms 0.2 0.4 0.6 0.8 1.0 4.0 v 3.0 v 2.5 v 2.0 v 1.8 v v gs = 1.5 v 1 2 3 4 t a = 75 ?c 25 ?c C25 ?c v ds = 3 v 3 1 0.3 0.1 v ds = 3 v t a = C25 ?c 25 ?c 75 ?c 3 1 3 . 0 1 . 0 3 0 . 0 3 1 3 . 0 1 . 0 3 0 . 0 t a = 75 ?c 25 ?c C25 ?c v gs = 1.5 v t a = 75 ?c 25 ?c C25 ?c v gs = 2.5 v
s m d ty p e w w w . k e x i n . c o m . c n 3 m osf e t n-cha nne l mo s f e t 2 sk1 9 5 9 ty pic al c har ac t er is it ic s drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - ? 0 1 0.8 0.6 0.4 0.2 v gs - gate to source voltage - v source to drain diode forward voltage i sd - diode forward current - a 0.2 10 1 0.1 0.01 0.001 v sd - source to drain voltage - v capacitance vs. drain to source voltage c iss , c rss , c oss - capacitance - pf 1 1 000 v ds - drain to source voltage - v switching characteristics t d(on) , t r , t d(off) , t f - switching time - ns 0.1 1 000 i d - drain current - a 4 2 6 8 10 i d = 50 ma 0.5 a 1 a 0.4 0.6 0.8 1 1.2 500 200 100 50 20 10 2 5 10 20 50 100 v gs = 0 f = 1 mhz c iss c oss c rss 500 200 100 50 20 10 0.2 0.5 1 2 5 10 t f t d(off) t d(on) t r v dd = 3 v v gs(on) = 3 v
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